? 2013 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c - 85 v v dgr t j = 25 c to 150 c, r gs = 1m - 85 v v gss continuous 15 v v gsm transient 25 v i d25 t c = 25 c - 96 a i dm t c = 25 c, pulse width limited by t jm - 300 a i a t c = 25 c - 48 a e as t c = 25 c1j p d t c = 25 c 298 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220 & to-247) 1.13/10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g to-247 6.0 g ds100025b(01/13) trenchp tm power mosfets p-channel enhancement mode avalanche rated IXTA96P085T ixtp96p085t ixth96p085t v dss = - 85v i d25 = - 96a r ds(on) 13 m features z international standard packages z avalanche rated z extended fbsoa z fast intrinsic diode z low r ds(on) and q g advantages z easy to mount z space savings z high power density applications z high-side switching z push pull amplifiers z dc choppers z automatic test equipment z current regulators z battery charger applications g = gate d = drain s = source tab = drain to-247 (ixth) g s d d (tab) to-263 aa (ixta) g s d (tab) g d s to-220ab (ixtp) d (tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a - 85 v v gs(th) v ds = v gs , i d = - 250 a - 2.0 - 4.0 v i gss v gs = 15v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v - 10 a t j = 125 c - 750 a r ds(on) v gs = -10v, i d = 0.5 ? i d25 , note 1 13 m
ixys reserves the right to change limits, test conditions, and dimensions. IXTA96P085T ixtp96p085t ixth96p085t ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = 0.5 ? i d25 , note 1 40 66 s c iss 13.1 nf c oss v gs = 0v, v ds = - 25v, f = 1mhz 1175 pf c rss 460 pf t d(on) 23 ns t r 34 ns t d(off) 45 ns t f 22 ns q g(on) 180 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 52 nc q gd 62 nc r thjc 0.42 c/w r thcs to-220 0.50 c/w to-247 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v - 96 a i sm repetitive, pulse width limited by t jm - 394 a v sd i f = - 48a, v gs = 0v, note 1 -1.3 v t rr 55 ns q rm 100 nc i rm - 3.6 a resistive switching times v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) i f = - 48a, -di/dt = -100a/ s v r = - 43v, v gs = 0v to-247 outline pins: 1 - gate 2 - drain 3 - source to-220 outline pins: 1 - gate 2 - drain 3 - source to-263 outline 1. gate 2. drain 3. source 4. drain dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.13 0 .005
? 2013 ixys corporation, all rights reserved IXTA96P085T ixtp96p085t ixth96p085t fig. 1. output characteristics @ t j = 25oc -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 v ds - volts i d - amperes v gs = -10v - 9v - 8v - 7v - 5 v - 6 v fig. 2. extended output characteristics @ t j = 25oc -350 -300 -250 -200 -150 -100 -50 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 v ds - volts i d - amperes v gs = -10v - 9v - 5 v - 6 v - 7 v - 8 v fig. 3. output characteristics @ t j = 125oc -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 v ds - volts i d - amperes v gs = -10v - 9v - 8v - 7v - 6v - 5v fig. 4. r ds(on) normalized to i d = - 48a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = -10v i d = - 96a i d = - 48a fig. 5. r ds(on) normalized to i d = - 48a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 -350 -300 -250 -200 -150 -100 -50 0 i d - amperes r ds(on) - normalized v gs = -10v t j = 25oc t j = 125oc fig. 6. maximum drain current vs. case temperature -110 -90 -70 -50 -30 -10 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTA96P085T ixtp96p085t ixth96p085t fig. 7. input admittance -140 -120 -100 -80 -60 -40 -20 0 -6.0 -5.5 -5.0 -4.5 -4.0 -3.5 -3.0 -2.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 -140 -120 -100 -80 -60 -40 -20 0 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode -300 -250 -200 -150 -100 -50 0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v gs - volts v ds = - 43v i d = - 48a i g = -1ma fig. 11. capacitance 100 1,000 10,000 100,000 -40 -35 -30 -25 -20 -15 -10 -5 0 v ds - volts capacitance - picofarads f = 1 mh z c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 110100 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc - - - --- - 100ms
? 2013 ixys corporation, all rights reserved IXTA96P085T ixtp96p085t ixth96p085t fig. 14. resistive turn-on rise time vs. drain current 20 24 28 32 36 40 44 -48 -46 -44 -42 -40 -38 -36 -34 -32 -30 -28 -26 -24 i d - amperes t r - nanoseconds r g = 1 ? , v gs = -10v v ds = - 43v t j = 25oc t j = 125oc fig. 15. resistive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 101214161820 r g - ohms t r - nanoseconds 20 25 30 35 40 45 50 55 60 65 70 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = -10v v ds = - 43v i d = - 48a, - 24a fig. 16. resistive turn-off switching times vs. junction temperature 19 20 21 22 23 24 25 26 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 35 40 45 50 55 60 65 70 t d(off) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = -10v v ds = - 43v i d = - 48a i d = - 24a fig. 13. resistive turn-on rise time vs. junction temperature 16 20 24 28 32 36 40 44 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = -10v v ds = - 43v i d = - 48a i d = - 24a fig. 18. resistive turn-off switching times vs. gate resistance 0 40 80 120 160 200 240 280 02468101214161820 r g - ohms t f - nanoseconds 0 50 100 150 200 250 300 350 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = -10v v ds = - 43v i d = - 24a, - 48a fig. 17. resistive turn-off switching times vs. drain current 42 46 50 54 58 62 66 -48 -46 -44 -42 -40 -38 -36 -34 -32 -30 -28 -26 -24 i d - amperes t f - nanoseconds 19 20 21 22 23 24 25 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc , v gs = - 10v v ds = - 43v t j = 25oc, 125oc
ixys reserves the right to change limits, test conditions, and dimensions. IXTA96P085T ixtp96p085t ixth96p085t ixys ref: t_96p085t(a6)11-08-10-a fig. 19. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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